Ha, JY Choi, JW Kang, CY Karmanenko, SF Yoon, SJ Choi, DJ Kim, HJ 2024-01-21T04:32:15Z 2024-01-21T04:32:15Z 2021-09-04 2005-09 0021-4922 https://pubs.kist.re.kr/handle/201004/136172 Single phase thin films of (Ba0.5Sr0.5)TiO3 have been prepared by single target RF magnetron sputtering. Through post-annealing process in box furnace at 1100 degrees C for 1 h, we have been able to improve the dielectric properties; dielectric permittivity, dielectric loss, and tunability. The change in dielectric properties before and after post-annealing is attributed to the change in film strain and the contraction in film lattice. English JAPAN SOC APPLIED PHYSICS ELECTRICAL-PROPERTIES Effects of annealing process on dielectric properties of (Ba,Sr)TiO3 thin films grown by RF magnetron sputtering Article 10.1143/JJAP.44.L1196 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, v.44, no.37-41, pp.L1196 - L1198 JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44 37-41 L1196 L1198 scie scopus 000232641900012 2-s2.0-32044474457 Physics, Applied Physics Article ELECTRICAL-PROPERTIES BST RF sputtering ferroelectric microwave tunable devices