Kim, JY Chung, IJ Lee, G Kim, YC Kim, JK Yu, JW 2024-01-21T04:32:49Z 2024-01-21T04:32:49Z 2021-09-03 2005-09 1567-1739 https://pubs.kist.re.kr/handle/201004/136183 N,N'-diphenylbutyl-3,4,9, 10-perylenebiscarboximide (PTCDI-C4Ph) were characterized by optical and electrochemical methods. A device with an ITO/PTCDI-C4Ph (approximate to 2 mu m)/Al structure was fabricated to measure mobility by time-of-flight techniques. This vacuum deposited organic layer was an amorphous state. Electrons were observed faster than holes. The electron and hole mobilities were 1.8 x 10(-4) cm(2)/V s and 1.1 X 10(-4) cm(2)/Vs under the electric field of 500 (V/cm)(1/2), respectively. This result shows that this organic compound is a good candidate for an n-type conduction. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER TRANSISTOR TRANSPORT DEVICES Mobility of electrons and holes in an n-type organic semiconductor perylene diimide thin film Article 10.1016/j.cap.2004.08.007 1 CURRENT APPLIED PHYSICS, v.5, no.6, pp.615 - 618 CURRENT APPLIED PHYSICS 5 6 615 618 scie scopus kci other ART000971691 000231253900011 2-s2.0-22144435595 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article TRANSISTOR TRANSPORT DEVICES perylene diimide mobility time of flight n-type semiconductor