Shin, Kyung-Ho 2024-01-21T04:33:26Z 2024-01-21T04:33:26Z 2021-09-03 2005-09 1738-8090 https://pubs.kist.re.kr/handle/201004/136195 The current induced magnetization switching effect at room temperature in various type of structure has been systematically investigated. We report that the effect can be enhanced by an insertion of a copper layer between the free cobalt and the gold capping layer, by the deposition of a ruthenium layer onto a substrate as a buffer layer, by the use of an exchange biased spin valve structure, and by a formation of a nano oxide layer in the middle of a thick cobalt pinned layer. The critical switching current of the nano-sized junction device measures as small as 7.5x10(6) A/cm(2) and the magnetoresistance as large as 2.5% even in an exchange biased spin valve structure. Korean KOREAN INST METALS MATERIALS SPIN-WAVES Improvement of Current Induced Magnetization Switching Devices for Ultra-High Density Magnetoresistive Random Access Memory Article 1 ELECTRONIC MATERIALS LETTERS, v.1, no.1, pp.63 - 76 ELECTRONIC MATERIALS LETTERS 1 1 63 76 scie 000208604900011 Materials Science, Multidisciplinary Materials Science Article SPIN-WAVES CIMS(current induced magnetization switching) spin valve exchange biased critical switching current magnetoresistance