Kim, ID Choi, YW Tuller, HL 2024-01-21T04:38:02Z 2024-01-21T04:38:02Z 2021-09-03 2005-07-25 0003-6951 https://pubs.kist.re.kr/handle/201004/136280 We report on the fabrication of field-effect transistors with transparent oxide semiconductor ZnO serving as the electron channel and high-K Bi1.5Zn1.0Nb1.5O7 (BZN) as the gate insulator. The devices exhibited very low operation voltages (< 4 V) due to high capacitance of the BZN dielectric. The field effect mobility and the current on/off ratio were 0.024 cm(2)/V s and 2x10(4), respectively, at an operating voltage of 4 V. The threshold voltage and subthreshold swing were 2 V and 0.25 V/dec, respectively. The high optical transparency (> 80% for wavelength > 400 nm), low-temperature processing, and low operation voltage of ZnO-based thin-film transistors with integrated BZN dielectric offer a promising route for the development of transparent and flexible electronics. (c) 2005 American Institute of Physics. English AMER INST PHYSICS Low-voltage ZnO thin-film transistors with high-K Bi1.5Zn1.0Nb1.5O7 gate insulator for transparent and flexible electronics Article 10.1063/1.1993762 1 APPLIED PHYSICS LETTERS, v.87, no.4 APPLIED PHYSICS LETTERS 87 4 scie scopus 000230725900071 2-s2.0-23744515183 Physics, Applied Physics Article