Zhao, ZM Hul'ko, O Kim, HJ Liu, J Shi, B Xie, YH 2024-01-21T04:38:48Z 2024-01-21T04:38:48Z 2021-09-01 2005-07-01 0040-6090 https://pubs.kist.re.kr/handle/201004/136294 InAs self-assembled quantum dots (QDs) were grown on Si (001) substrates via molecular beam epitaxy. The size distribution and density of InAs QDs grown under different conditions were studied using plan-view transmission electron microscopy. Dot density was shown to strongly depend on arsenic beam equivalent pressure (BEP) ranging from 2.8 X 10(-5) to 1.2 x 10(-3) Pa. In contrast, dot density was nearly independent of substrate temperature from 295 to 410 degrees C under constant arsenic BEP, while broadening of size distribution was observed with increasing temperature. The mechanism accounting for some of the main features of the experimental observations is discussed. Finally, InAs quantum dots with optimized narrow size distribution and high density were grown at low arsenic BEP of 7.2 X 10(-5) Pa and low temperature of 250 degrees C followed by annealing at arsenic BEP of 1.9 X 10(-4) Pa and temperature of 410 degrees C. (c) 2005 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA MOLECULAR-BEAM EPITAXY ISLAND FORMATION INITIAL-STAGES GAAS SILICON LASERS NUCLEATION GAAS(100) SI(100) ADATOM Effects of growth temperature and arsenic pressure on size distribution and density of InAs quantum dots on Si (001) Article 10.1016/j.tsf.2005.01.003 1 THIN SOLID FILMS, v.483, no.1-2, pp.158 - 163 THIN SOLID FILMS 483 1-2 158 163 scie scopus 000229681700027 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article MOLECULAR-BEAM EPITAXY ISLAND FORMATION INITIAL-STAGES GAAS SILICON LASERS NUCLEATION GAAS(100) SI(100) ADATOM molecular beam epitaxy indium arsenide quantum dots transmission electron microscopy