Choi, BG Kim, IH Kim, DH Lee, KS Lee, TS Cheong, B Baik, YJ Kim, WM 2024-01-21T04:39:42Z 2024-01-21T04:39:42Z 2021-09-05 2005-07 0955-2219 https://pubs.kist.re.kr/handle/201004/136309 Al and F-doped ZnO films of 200 nm thicknesses were prepared on glass substrates by co-sputtering ZnO targets composed of 2 wt.% Al2O3, 1.3 wt.% ZnF and pure ZnO targets, respectively. After annealing in vacuum pressure of 10(-6) Torr at 300 degrees C for 2 h, the resistivity of ZnO films decreased down to 4.75 x 10(-4) Omega cm and ZnO film which composed of Al-doped ZnO 25% and F-doped ZnO 75% by volume fraction showed the highest mobility of 42.2 cm(2)/Vs. From XRD measurements it was found that F dopants improved crystallization of ZnO films. Form XPS spectra of oxygen 1 s binding energy and Hall measurements it was confirmed that by vacuum annealing chemisorbed oxygens at the grain boundary desorbed and reduced grain boundary scattering. Also figure of merit (FOM) defined as ratio of electrical conductivity to optical absorption coefficient increased up to 2.67 Omega(-1) after post annealing. (c) 2005 Elsevier Ltd. All rights reserved. English ELSEVIER SCI LTD ZINC-OXIDE DEPOSITION Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter Article 10.1016/j.jeurceramsoc.2005.03.023 1 JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v.25, no.12, pp.2161 - 2165 JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 25 12 2161 2165 scie scopus 000230569300040 2-s2.0-20444499402 Materials Science, Ceramics Materials Science Article; Proceedings Paper ZINC-OXIDE DEPOSITION electrical properties ZnO transparent and conducting oxide