Hwang, SH Shin, JC Song, JD Choi, WJ Lee, JI Han, H Lee, SW 2024-01-21T04:40:29Z 2024-01-21T04:40:29Z 2021-09-03 2005-07 0021-4922 https://pubs.kist.re.kr/handle/201004/136324 We investigated the device performances for a post-growth thermally. treated In(0.5)Ga(0.5)As/GaAs quantum-dot infrared detector (QDIP). Device characteristics, such as dark current, photoluminescence (PL), and photocurrent spectra, have been studied and compared for the as-grown and thermally treated QDIPs. After the thermal treatment with a SiO(2) capping layer, the dark current was increased, the PL peak position was blue-shifted, and the detection wavelength was redshifted due to In/Ga interdiffusion in the quantum dot (QD) structure. Furthermore, the activation energies estimated from the integrated PL intensities agreed well with the peak positions of the photocurrent spectra. English JAPAN SOC APPLIED PHYSICS HIGH-TEMPERATURE BLOCKING LAYER WAVELENGTH PHOTOLUMINESCENCE PHOTOCONDUCTIVITY INGAAS/GAAS WELLS Characteristics of thermally treated quantum-dot infrared photodetector Article 10.1143/JJAP.44.5696 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.7B, pp.5696 - 5699 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 7B 5696 5699 scie scopus 000232029300086 2-s2.0-31844449135 Physics, Applied Physics Article; Proceedings Paper HIGH-TEMPERATURE BLOCKING LAYER WAVELENGTH PHOTOLUMINESCENCE PHOTOCONDUCTIVITY INGAAS/GAAS WELLS quantum-dot infrared photodetector thermal treatment