T.Hoang Yen Nguyen 이현정 신경호 주성중 정명화 2024-01-21T04:44:26Z 2024-01-21T04:44:26Z 2021-09-06 2005-06 1226-1750 https://pubs.kist.re.kr/handle/201004/136396 The spin transfer induced magnetization switching has been reported to occur in magnetic multilayer structures whose scope usually consists of one stack of ferromagnetic(FF) materials. In this work, it is shown that: 1) Copper used as a buffer layer between the free Co and the Au cap-layer can clearly increase the probability to get the spin transfer induced magnetization switching in a simple spin valve Co 116Co 2 (nm); 2) Furthermore, when Ruthenium is simultaneously applied as a buffer layer on the Si-substrate, the critical switching currents can be reduced by 30%, and the absolute resistance change delta R [DR] of that stack can be enlarged by 35%. The enhancement of the spin transfer induced magnetization switching can be ascribed to a lower local stress in the thin Co layer caused by a better lattice match between Co and Cu and the smoothening effect of Ru on the thick Co layer. 한국자기학회 Improvement of the Spin Transfer Induced Switching Effect by Copper and Ruthenium Buffer Layer Article 2 Journal of Magnetics, v.10, no.2, pp.48 - 51 Journal of Magnetics 10 2 48 51 kci ART000964144 Spin transfer Magnetoresistance-based spintronic devices nano-scaled magnetic multilayers Cu and/or Ru buffer layer Spin transfer Magnetoresistance-based spintronic devices nano-scaled magnetic multilayers Cu and/or Ru buffer layer