구현철 이현정 장준연 한석희 고재범 J.D.Song 2024-01-21T05:00:48Z 2024-01-21T05:00:48Z 2021-09-06 2005-06 1226-1750 https://pubs.kist.re.kr/handle/201004/136413 The junction properties between the ferromagnet(FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low transmission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with Al2O3 tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier. 한국자기학회 Electron Transport of Low Transmission Barrier between Ferromagnet and Two-Dimensional Electron Gas (2DEG) Article 2 Journal of Magnetics, v.10, no.2, pp.66 - 70 Journal of Magnetics 10 2 66 70 kci ART001189679 2DEG GaAs InAs ohmic schottky potentiometric measurement 2DEG GaAs InAs ohmic schottky potentiometric measurement