Park, JY Seo, JH Whang, CN Kim, SS Choi, DS Chae, KH 2024-01-21T05:03:11Z 2024-01-21T05:03:11Z 2021-09-03 2005-05-22 0021-9606 https://pubs.kist.re.kr/handle/201004/136457 The atomic structure of reconstructed Si(001)c(434)-C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C2H4) molecules have been exposed on Si(001)-(231) surface at 700 degrees C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface. (c) 2005 American Institute of Physics. English AMER INST PHYSICS ION-SCATTERING SPECTROSCOPY ATOMIC-STRUCTURE SI(100) GROWTH Structural analysis of the reconstructed Si(001)-C surface Article 10.1063/1.1908452 1 JOURNAL OF CHEMICAL PHYSICS, v.122, no.20 JOURNAL OF CHEMICAL PHYSICS 122 20 scie scopus 000229544500056 2-s2.0-20844447935 Chemistry, Physical Physics, Atomic, Molecular & Chemical Chemistry Physics Article ION-SCATTERING SPECTROSCOPY ATOMIC-STRUCTURE SI(100) GROWTH Atomic structure Silicon Reconstruction Ethylene Low energy ion scattering