Han, DS Bae, SY Seo, HW Kang, YJ Park, J Lee, G Ahn, JP Kim, S Chang, J 2024-01-21T05:03:20Z 2024-01-21T05:03:20Z 2021-09-03 2005-05-19 1520-6106 https://pubs.kist.re.kr/handle/201004/136460 We characterized the structure and magnetic properties of Mn-incorporated GaP nanowires synthesized by thermal evaporation of GaP/Mn powders. The nanowires consist of twin-crystal line zinc blende GaP grown with the [111] direction and doped with about 1 at. % Mn. They are often sheathed with the bumpy amorphous outerlayers containing high concentrations of Mn and O. The ferromagnetic hysteresis curves at 5 and 300 K and temperature-dependent magnetization provide evidence for the ferromagnetism with the Curie temperature higher than room temperature. Magnetic properties of individual nanowires have been measured, showing a large negative magnetoresistance equal to about -5% at 5 K. We suggest that the Mn doping of GaP nanowires would form a dilute magnetic semiconductor. English AMER CHEMICAL SOC ROOM-TEMPERATURE FERROMAGNETISM GALLIUM-PHOSPHIDE NANOWIRES MOLECULAR-BEAM-EPITAXY THIN-FILMS ZNO SEMICONDUCTOR GAMNN INJECTION GROWTH Synthesis and magnetic properties of manganese-doped GaP nanowires Article 10.1021/jp050655s 1 JOURNAL OF PHYSICAL CHEMISTRY B, v.109, no.19, pp.9311 - 9316 JOURNAL OF PHYSICAL CHEMISTRY B 109 19 9311 9316 scie scopus 000229134000019 2-s2.0-19944378109 Chemistry, Physical Chemistry Article ROOM-TEMPERATURE FERROMAGNETISM GALLIUM-PHOSPHIDE NANOWIRES MOLECULAR-BEAM-EPITAXY THIN-FILMS ZNO SEMICONDUCTOR GAMNN INJECTION GROWTH GaP DMS nanowire magnetoresistance