Yi, H Koo, HC Kim, WY Chang, JY Han, SH Lim, SH 2024-01-21T05:03:46Z 2024-01-21T05:03:46Z 2021-09-03 2005-05-15 0021-8979 https://pubs.kist.re.kr/handle/201004/136464 A spin device composed of two ferromagnetic electrodes and InAs two-dimensional electron gas was fabricated. Submicron spin channels were defined to enhance spin transport characteristics. Electrical transport measurement was performed to detect spin-polarized electrons. In potentiometric geometry a voltage change, Delta V=0.17 mV, sensed by a ferromagnetic electrode was obtained at 5 and 77 K. In the nonlocal method Delta V=0.057 mV, which resulted from accumulated spin-polarized electrons, was obtained at 77 K. The main reason for theses large signals is that the short and narrow spin channels increase the possibility for spin-polarized electrons to arrive at the spin detector. (c) 2005 American Institute of Physics. English AMER INST PHYSICS INJECTION SEMICONDUCTOR INTERFACE Spin transport in an InAs based two-dimensional electron gas nanochannel Article 10.1063/1.1852213 1 JOURNAL OF APPLIED PHYSICS, v.97, no.10 JOURNAL OF APPLIED PHYSICS 97 10 scie scopus 000230168300222 2-s2.0-20844463843 Physics, Applied Physics Article; Proceedings Paper INJECTION SEMICONDUCTOR INTERFACE spin FET InAs nanochannel spin transport