Kim, WY Chang, JY Han, SH Lee, WY Chang, SG 2024-01-21T05:04:05Z 2024-01-21T05:04:05Z 2021-09-01 2005-05-15 0021-8979 https://pubs.kist.re.kr/handle/201004/136470 We present an enhanced Hall voltage from the gate-controlled Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single ferromagnetic element. Magnetic fringe field at an edge of the ferrogmanetic element gives rise to the Hall voltage, which shows hysteretic behavior upon magnetic-field sweep. The Hall effect is amplified by a factor of similar to 40% when a gate voltage of -25 V is applied. The increase is largely attributed to the reduction of carrier density affected by the gate confinement effect. The InSb Hall device controlled by gate voltage demonstrates a possible application for active nonvolatile memory cells and logic gate. (c) 2005 American Institute of Physics. English AMER INST PHYSICS MAGNETORESISTANCE SEMICONDUCTORS SENSORS FILMS Enhanced Hall voltage in a gate-controlled InSb Hall device Article 10.1063/1.1855231 1 JOURNAL OF APPLIED PHYSICS, v.97, no.10 JOURNAL OF APPLIED PHYSICS 97 10 scie scopus 000230168300227 2-s2.0-20944452235 Physics, Applied Physics Article; Proceedings Paper MAGNETORESISTANCE SEMICONDUCTORS SENSORS FILMS InSb Hall device stray field