Nah, J 2024-01-21T05:04:39Z 2024-01-21T05:04:39Z 2022-01-25 2005-05 1071-1023 https://pubs.kist.re.kr/handle/201004/136481 Si-doped self-assembled InAs quantum-dot samples were grown, and the influences of doping on the structural and optical properties of quantum dots were investigated. As Si doping concentrations increased, increased size, reduced areal density, and broadened size distributions of quantum dots were observed. Photoluminescence spectra of Si-doped quantum dots showed that the peaks of ground state transitions shifted with varied doping concentrations while, the peak positions of wetting layers were unchanged. Photoluminescence intensities of excited state transitions of Si-doped quantum dots and of wetting layers were reduced as Si concentration increased. (c) 2005 American Vacuum Society. English A V S AMER INST PHYSICS Growth and characterization of Si-doped self-assembled InAs quantum dots Article 10.1116/1.1900735 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.23, no.3, pp.1047 - 1049 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 23 3 1047 1049 N scie scopus 000230479600028 2-s2.0-31144444896 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Physics, Applied Engineering Science & Technology - Other Topics Physics Article CARRIER RELAXATION PHOTOLUMINESCENCE CONSERVATION WELLS