노대호 김재수 변동진 양재웅 이재훈 김나리 2024-01-21T05:05:23Z 2024-01-21T05:05:23Z 2021-09-06 2005-05 1225-0562 https://pubs.kist.re.kr/handle/201004/136495 Effects of gases to growth of SiO2 nanowires were characterized. N2, Ar, and O2 gas's effect were determined. SiO2 nanowires growth scheme was varied by kind and flow rates of gases because of amounts of O2. Flow rates of gases and kind of substrates affected nanowires' diameters, lengths and morphologies of grown nono wires. With increasing flow rates of gases, nanowire's diameter increased because of additional VS and SLS reactions. By TEM characterization, We knonws that, grown SiO2 nanowires on Si substrate showed two shell structures. These shapes of nanowires were formed by reaction of additional SLS growth. Grown SiO2 nanowires showed blue luminescence by PL characterization These Blue luminescence was due to quantum confinement effect and oxygen vacancies in the nanowires. 한국재료학회 기상휘발법에 의한 이산화규소 나노와이어의 성장에 미치는 가스의 영향 Effect of ambient gas to growth of SiO2 nanowires by vapor evaporation method Article 2 한국재료학회지, v.15, no.5, pp.323 - 333 한국재료학회지 15 5 323 333 kci ART000863248 SiO2 nanowire SiO2 nanowire ambient gas