Kim, HK Bae, JW Adesida, I Kim, T Seong, TY Kim, JS Yoon, YS 2024-01-21T05:06:01Z 2024-01-21T05:06:01Z 2021-09-05 2005-05 0013-4651 https://pubs.kist.re.kr/handle/201004/136507 Inductively coupled plasma reactive ion etching (ICP-RIE) of ZrO2:H solid electrolyte films was investigated using BCl3-based plasma. ZrO2: H etch rates were studied as a function of the BCl3/Ar chemistry, ICP coil power, bias voltage, and working pressure. Scanning electron microscopy and atomic force microscopy were employed to characterize the etch rate and root-mean-square surface roughness of etched samples. It was found that in comparison with Cl-2-based gas mixtures, pure BCl3 plasma results in a high etch rate of ZrO2: H layer, suggesting an abundance of B and BCl radicals made up of a volatile compound such as BxOy, BCl-O, and Zr-Cl bond. In addition, Auger electron spectroscopy analysis exhibits that the BCl3-based etching process produces no change in surface stoichiometry of the ZrO2:H films. (c) 2005 The Electrochemical Society. English ELECTROCHEMICAL SOC INC FUEL-CELL ALUMINUM ZNO DENSITY DESIGN SI Inductively coupled plasma reactive ion etching of ZrO2 : H solid electrolyte film in BCl3-based plasmas Article 10.1149/1.1885285 1 JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.152, no.5, pp.A922 - A926 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 152 5 A922 A926 scie scopus 000228521400012 2-s2.0-20344404712 Electrochemistry Materials Science, Coatings & Films Electrochemistry Materials Science Article FUEL-CELL ALUMINUM ZNO DENSITY DESIGN SI 고체산화물연료전지 마이크로 연료전지 지르코니아