Ahn, DH Kang, DH Cheong, BK Kwon, HS Kwon, MH Lee, TY Jeong, JH Lee, TS Kim, IH Kim, KB 2024-01-21T05:06:51Z 2024-01-21T05:06:51Z 2021-09-03 2005-05 0741-3106 https://pubs.kist.re.kr/handle/201004/136523 A nonvolatile memory technology utilizing reversible changes between fcc and hcp crystalline phases is proposed. In this new type of phase-change memory, data are stored in different forms of crystalline phases of (Ge1Sb2Te4)(0.8)(Sn1Bi2Te4)(0.2) chalcogenide alloy. RESET operation produces the less conductive metastable fcc phase via melt-quenching from the more conductive stable hep phase and SET operation involves a phase change from fcc directly to hcp. Both RESET and SET operations can be completed as fast as 70 ns with large changes in cell resistance. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC THIN-FILM A nonvolatile memory based on reversible phase changes between fcc and hcp Article 10.1109/LED.2005.846576 1 IEEE ELECTRON DEVICE LETTERS, v.26, no.5, pp.286 - 288 IEEE ELECTRON DEVICE LETTERS 26 5 286 288 scie scopus 000228706300003 2-s2.0-21044437184 Engineering, Electrical & Electronic Engineering Article THIN-FILM amorphous semiconductor chalcogenide non-volatile memory phase transformation phase-change memory (PCM)