Park, YM Park, YJ Song, JD Lee, JI 2024-01-21T05:06:55Z 2024-01-21T05:06:55Z 2021-09-03 2005-05 0038-1098 https://pubs.kist.re.kr/handle/201004/136524 We have fabricated a Schottky diode embedding InAs self-assembled quantum dots (QDs) grown by alternately supplying In and As sources. As a function of the electric field, we have investigated the photoluminescence (PL) for the InAs QDs in the Schottky diode at 300 K. We controlled the electric field in order that the QD layer was located in the depletion region of Schottky diode. The relationship between the electric field and the depletion width of the Schottky diode was deduced through the capacitance-voltage measurement. The Stark shift was observed in PL spectra for QDs; the energy of the PL line shifted to the lower energy as the electric field increased. It was also observed that the PL emission intensity gradually decreased. By the fitting to the experimental data, we determined a built-in dipole moment, corresponding to an electron-hole separation. (c) 2005 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD ELECTRON-HOLE ALIGNMENT STATE FIELD LAYER Estimation of built-in dipole moment in InAs quantum dots Article 10.1016/j.ssc.2005.02.008 1 SOLID STATE COMMUNICATIONS, v.134, no.6, pp.391 - 395 SOLID STATE COMMUNICATIONS 134 6 391 395 scie scopus 000228853400004 2-s2.0-15544375379 Physics, Condensed Matter Physics Article ELECTRON-HOLE ALIGNMENT STATE FIELD LAYER quantum dots quantum-confined Stark effect dipole moment