Liu, F Bao, MQ Kim, HJ Wang, KL Li, C Liu, XL Zhou, CW 2024-01-21T05:07:41Z 2024-01-21T05:07:41Z 2021-09-01 2005-04-18 0003-6951 https://pubs.kist.re.kr/handle/201004/136538 Giant random telegraph signals (RTSs) are observed in p-type semiconducting single-wall carbon nanotube (SWNT) field-effect transistors (FETs). The RTSs are attributed to the trapping and detrapping of the two defects inside SiO2 or in the interface between SWNT and SiO2. The amplitude of the RTSs is up to 60% of total current. The giant switching amplitude of RTSs is believed to be caused by the strong mobility modulation originated from the charging of the defects in the one-dimensional carbon nanotube channels with an ultrasmall channel width on the order of 1-3 nm. The potential application of RTSs in SWNT as a sensitive probe to study single defects is discussed. (c) 2005 American Institute of Physics. English AMER INST PHYSICS FIELD-EFFECT TRANSISTORS SI-SIO2 INTERFACE 1/F NOISE KINETICS Giant random telegraph signals in the carbon nanotubes as a single defect probe Article 10.1063/1.1901822 1 APPLIED PHYSICS LETTERS, v.86, no.16 APPLIED PHYSICS LETTERS 86 16 scie scopus 000229040300058 Physics, Applied Physics Article FIELD-EFFECT TRANSISTORS SI-SIO2 INTERFACE 1/F NOISE KINETICS