Maikap, S Lee, JH Mahapatra, R Pal, S No, YS Choi, WK Ray, SK Kim, DY 2024-01-21T05:11:43Z 2024-01-21T05:11:43Z 2021-09-03 2005-04 0038-1101 https://pubs.kist.re.kr/handle/201004/136613 The interfacial characteristics of high-kappa HfO2 on NH3- and N2O-plasma treated p-Si substrates have been investigated using high-resolution transmission electron microscopy (HRTEM), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), and auger electron spectroscopy (AES). NH3- and N2O-plasma treated films show the formation of a nitrogen-rich Hf-silicate interfacial layer between the deposited HfO2 and Si substrates. The electrical characteristics have been studied using metal-oxide-semiconductor (MOS) structures. Interfacial nitrogen increases the capacitances by similar to33% for NH3 and similar to47% for N2O-treated Si as compared to the untreated surface. A dielectric constant of similar to26 for HfO2 film, similar to6.0 for Hf-silicate, similar to9.0 for NH3- and similar to11.0 for N2O-treated interfacial layers have been calculated from the accumulation capacitances of the MOS capacitors. The relatively higher dielectric constant, lower capacitance equivalent thickness (CET), lower leakage current and higher breakdown voltage for N2O-plasma treated film makes it attractive for scaled Si MOSFET applications. (C) 2004 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD NITRIDATION FILMS N2O Effects of interfacial NH3/N2O-plasma treatment on the structural and electrical properties of ultra-thin HfO2 gate dielectrics on p-Si substrates Article 10.1016/j.sse.2004.10.009 1 SOLID-STATE ELECTRONICS, v.49, no.4, pp.524 - 528 SOLID-STATE ELECTRONICS 49 4 524 528 scie scopus 000227319000002 2-s2.0-13644264191 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article NITRIDATION FILMS N2O high-kappa gate dielectric HfO2 plasma nitridation CET