Lee, CM Choi, SH Noh, SK Lee, JI Kim, JS Han, IK 2024-01-21T05:11:53Z 2024-01-21T05:11:53Z 2021-09-03 2005-04 0021-4922 https://pubs.kist.re.kr/handle/201004/136616 We report a photoluminescence study of self-assembled InAs/GaAs quantum dots (QDs) in which excitation intensity and temperature were varied. The power-dependent photoluminescence spectra reveal three peaks associated with the ground-state transitions of QDs in three branches of different sizes. Thermal carrier redistribution among the three branches of QDs is observed and investigated in terms of the temperature dependence of their relative photoluminescence peak energy, linewidth and intensity. It is found that the optical properties are rather different and unexpected among the three branches of QDs with increasing temperature, which originate from the thermally activated carrier transfer from QDs in the smaller size group to those in the larger size group. We propose a model in which carrier transfer between QDs is facilitated by the wetting layer and which explains the unusual photoluminescence behavior. English JAPAN SOC APPLIED PHYSICS Three-modal size distribution of self-assembled InAs quantum dots Article 10.1143/JJAP.44.2037 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.4A, pp.2037 - 2040 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 4A 2037 2040 scie scopus 000228810000110 2-s2.0-21244445012 Physics, Applied Physics Article quantum dot photoluminescence three-modal size distribution