Lee, KJ Roh, Y Kim, IS Kim, YT 2024-01-21T05:12:52Z 2024-01-21T05:12:52Z 2022-01-25 2005-03-22 0040-6090 https://pubs.kist.re.kr/handle/201004/136635 We investigated the effects of charge trapping on the asymmetrical increase in the memory window of metal-ferroelectric-insulator-semiconductor (MFIS) devices. We suggest that defect centers located at the ferroelectric-insulator interface play important roles in generating the asymmetrical increase in the memory window: Electron trapping at/near the SBN (or SBT)-Y2O3 interface via avalanche electron injection from the Si substrate results in the preferential domain switching, causing the asymmetrical increase in the memory window. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA YMNO3 THIN-FILMS VOLTAGE SI Asymmetrical increase of memory window in MFIS devices after avalanche electron injection Article 10.1016/j.tsf.2004.07.035 1 THIN SOLID FILMS, v.475, no.1-2, pp.139 - 143 THIN SOLID FILMS 475 1-2 139 143 scie scopus 000227268600028 2-s2.0-13444291344 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper YMNO3 THIN-FILMS VOLTAGE SI nonvolatile memory MFIS SBN SBT Y2O3 charge trapping