Park, HS Jung, HJ Jeong, K Choi, WK 2024-01-21T05:13:08Z 2024-01-21T05:13:08Z 2021-09-03 2005-03-22 0040-6090 https://pubs.kist.re.kr/handle/201004/136640 Ar cluster was generated by an adiabatic expansion using a converging-diverging Laval nozzle at the pressure 5-7 bar and at room temperature. The size distribution of the cluster was estimated by a time-of-flight (TOF) spectroscopy and the mean size of the cluster at 5 bar was about 500 molecules. Ar cluster was ionized by electron impact and then irradiated on Si(100) and GaAs(100) semiconductor crystal surfaces at the very low fluence to investigate the interaction of cluster with the solid surface. From the isolated cluster impact at the acceleration 15-25 keV, nanoprotrusion with a few tens and hundreds of nanometer diameter and a few nanometer height was observed. This formation of out-grown nano-structure instead of inward crater is predicted due to the increase of the local pressure up to 10-100 GPa and local heating 10(4)-10(5) K in ps by an impingement of cluster ion beam and re-bounce of liquid medium from the solid and subsequently quenching effect. In addition, the change of Si (100) surface roughness was investigated with the variations of Ar cluster ion dose, and from which phenomenological ESE model of cluster ion impact with solid surface, i.e., surface embossment(E), surface sputtering/smoothing(S), and surface etching(E), is proposed to happen in sequence. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA HOPG Investigation of nanoprotrusion induced by isolated impact of Ar cluster ion beam on Si and GaAs crystal Article 10.1016/j.tsf.2004.07.031 1 THIN SOLID FILMS, v.475, no.1-2, pp.36 - 40 THIN SOLID FILMS 475 1-2 36 40 scie scopus 000227268600008 2-s2.0-13444301201 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper HOPG cluster laval nozzle time-of-flight isolated cluster impact nanoprotrusion crater surface roughness ion dose surface embossment surface sputtering/smoothing surface etching