Park, JH Hwang, IS Choi, YJ Park, JG 2024-01-21T05:13:17Z 2024-01-21T05:13:17Z 2021-09-03 2005-03-15 0022-0248 https://pubs.kist.re.kr/handle/201004/136642 ZnO nanorods with diameter 30-300 nm were synthesized by a pulsed laser deposition process in a hot-wall type chamber at the elevated temperatures above 800 degrees C. At temperatures 500-800 degrees C, ZnO thin films and wrinkles were synthesized. Above 800 degrees C, vertically aligned ZnO nanorods were grown on the Si and sapphire substrate without any catalysts. The range of diameter was 100-300 nm. When An catalyst were deposited on the substrate prior to the deposition, the process range of ZnO nanorod become wider and the diameter of ZnO smaller. Especially, ZnO could be grown selectively along the pattern of An catalyst with the aid of Au-Zn alloy. The feasibility of doping of P, as a p-type dopant, was identified with this hot-wall type and high-temperature compatible process. (c) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV THIN-FILMS GROWTH Synthesis of ZnO nanorods by a hot-wall high-temperature laser deposition process Article 10.1016/j.jcrysgro.2004.11.328 1 JOURNAL OF CRYSTAL GROWTH, v.276, no.1-2, pp.171 - 176 JOURNAL OF CRYSTAL GROWTH 276 1-2 171 176 scie scopus 000228218300025 2-s2.0-20344379198 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article THIN-FILMS GROWTH nanostructures growth from vapor physical vapor deposition processes semiconducting II-VI materials