Lim, JG Park, YJ Park, YM Song, JD Choi, WJ Han, IK Cho, WJ Lee, JI Kim, TW Kim, HS Park, CG 2024-01-21T05:13:57Z 2024-01-21T05:13:57Z 2021-09-01 2005-03-01 0022-0248 https://pubs.kist.re.kr/handle/201004/136655 The effect of InxGa1-xAs (x = 0.1, 0.2) asymmetric strain release layers (ASRLs) on the microstructural and the interband transition properties of InAs/GaAs quantum dots (QDs) grown by using molecular beam epitaxy (MBE) and atomic layer epitaxy was investigated by using high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) measurements. When the thickness of the ASRL covering the QDs was increased in the range between 0 and 5 nm, the PL peak corresponding to the interband transitions shifted to longer wavelengths due to strain relaxation. However, when the thickness of the ASRL was increased above approximately 7nm, the peak shifted to shorter wavelengths due to the local interdiffusion of In and Ga atoms between the InxGa1-xAs capping layer and the InAs QDs as a result of the localized strains in the InxGa1-xAs capping layer and the InAs QDs. These results provide important information on the tunable feasibility of the interband transitions in the InAs/GaAs QDs utilizing the InxGa1-xAs capping layer. (c) 2004 Elsevier B.V. All rights reserved. English ELSEVIER TEMPERATURE-DEPENDENCE ENERGY-LEVELS EFFICIENCY ISLANDS INGAAS PHOTOLUMINESCENCE POLARIZATION ENSEMBLES DEFECTS Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots Article 10.1016/j.jcrysgro.2004.12.015 1 JOURNAL OF CRYSTAL GROWTH, v.275, no.3-4, pp.415 - 421 JOURNAL OF CRYSTAL GROWTH 275 3-4 415 421 scie scopus 000228116800007 2-s2.0-20044384863 Crystallography Materials Science, Multidisciplinary Physics, Applied Crystallography Materials Science Physics Article TEMPERATURE-DEPENDENCE ENERGY-LEVELS EFFICIENCY ISLANDS INGAAS PHOTOLUMINESCENCE POLARIZATION ENSEMBLES DEFECTS nanostructures atomic layer epitaxy semiconducting III-V materials