Lee, HW Choi, BG Shim, KB Oh, YJ 2024-01-21T05:30:59Z 2024-01-21T05:30:59Z 2021-09-04 2005-03 1229-9162 https://pubs.kist.re.kr/handle/201004/136691 Ti-doped ZnO thin films were prepared on a soda-lime glass substrate without any post heat treatment by a pulsed laser deposition (PLD) method. Processing parameters such as deposition substrate temperature, the amount of Ti-doping and oxygen flow rate were investigated. It was found that the Ti-doped ZnO thin films exhibited a strongly preferred orientation along a C-axis (002) plane and their structural, electrical and optical properties depended strongly on these parameters. Transparent conducting ZnO oxide thin films with 1 mol% Ti content formed under the conditions of a substrate temperature of 100 degrees C in an oxygen flow rate of 10 sccm showed an electrical resistivity of 3.3 x 10(-2) ohm cm, a mean optical transmittance of 92.3% with a thickness of 480 nm. English KOREAN ASSOC CRYSTAL GROWTH, INC LIGHT-EMITTING DEVICES PULSED-LASER DEPOSITION SPRAY-PYROLYSIS Preparation of Ti-doped ZnO transparent conductive thin films by PLD method Article 1 JOURNAL OF CERAMIC PROCESSING RESEARCH, v.6, no.1, pp.52 - 56 JOURNAL OF CERAMIC PROCESSING RESEARCH 6 1 52 56 scie scopus kci other ART001021225 000228339100009 2-s2.0-17444374903 Materials Science, Ceramics Materials Science Article LIGHT-EMITTING DEVICES PULSED-LASER DEPOSITION SPRAY-PYROLYSIS pulsed laser deposition (PLD) ZnO transparent conducing oxide (TCO)