Park, YM Park, YJ Kim, KM Song, JD Lee, JI 2024-01-21T05:31:02Z 2024-01-21T05:31:02Z 2021-09-04 2005-03 0951-3248 https://pubs.kist.re.kr/handle/201004/136692 We investigated the quantum-confined Stark effect (QCSE) in the self-assembled InAs quantum dots (QDs). The QDs are formed by the atomic layer molecular beam epitaxy (ALMBE) technique using alternately supplying InAs and GaAs sources. From the electric field dependent photoluminescence measurements, permanent dipole moment is estimated to p = (4.8 +/- 1.6) x 10(-29) Cm, indicating that QDs have a permanent dipole moment. This corresponds to the electron-hole separation of r = 3 +/- 1 angstrom. English IOP PUBLISHING LTD ISLANDS GAAS Electron-hole separation in InAs quantum dots Article 1 COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS, v.184, pp.439 - 442 COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS 184 439 442 scie scopus 000229928100095 2-s2.0-33644512065 Materials Science, Ceramics Physics, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper ISLANDS GAAS InAs Quantum dots electron-hole separation