Hwang, SH Shin, JC Song, JD Choi, WJ Lee, JI Han, H 2024-01-21T05:31:08Z 2024-01-21T05:31:08Z 2021-09-03 2005-03 0026-2692 https://pubs.kist.re.kr/handle/201004/136694 Thermal treatment of In0.5Ga0.5As/GaAs quantum dot infrared photodetector (QDIP) structure has been carried out at 700 degrees C for 1 min with SiO2 capping layer. Thermal treatment of In0.5Ga0.5As/GaAs QDIP structure induced a blue-shift in its photoluminescence (PL) spectrum by a 50 meV with a reduction of its intensity. The blue-shift in PL spectrum and the reduction in PL intensity is thought to be due to the interdiffusion of In and Ga at the interfaces of quantum dots (QDs) and GaAs barriers. The fabricated QDIP with thermally treated structure showed a red-shift in its photocurrent spectrum by a 22 meV from the photocurrent peak of 200 meV for as-grown QDIP, as a consequence of the blue-shift of QD bandgap. (c) 2005 Elsevier Ltd. All rights reserved. English ELSEVIER SCI LTD HIGH-TEMPERATURE PHOTOCONDUCTIVITY INTERDIFFUSION Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment Article 10.1016/j.mejo.2005.02.006 1 MICROELECTRONICS JOURNAL, v.36, no.3-6, pp.203 - 206 MICROELECTRONICS JOURNAL 36 3-6 203 206 scie scopus 000229666000010 2-s2.0-33644532223 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Engineering Science & Technology - Other Topics Article; Proceedings Paper HIGH-TEMPERATURE PHOTOCONDUCTIVITY INTERDIFFUSION quantum dot infrared photodetector thermal treatment