Kim, J Jun, HW Song, H Lee, JH Lee, HW 2024-01-21T05:31:18Z 2024-01-21T05:31:18Z 2021-09-03 2005-03 1013-9826 https://pubs.kist.re.kr/handle/201004/136697 High strength reaction-bonded silicon carbide ceramics was successfully produced by reducing the amount of residual silicon and the silicon pocket size with carbon black as an additional carbon source. A prototype of wafer carrier was also produced in near-net dimension by planar contact infiltration of molten silicon into a preform joined with six pieces of simple shape by eliminating process shrinkages. Forming shrinkages were decreased to a negligible level by compression molding, while sintering shrinkage was eliminated by reactive infiltration of molten silicon. English TRANS TECH PUBLICATIONS LTD Effect of carbon black addition on reaction-bonded silicon carbide ceramics Article 10.4028/www.scientific.net/KEM.287.189 1 ADVANCED SI-BASED CERAMICS AND COMPOSITES, v.287, pp.189 - 193 ADVANCED SI-BASED CERAMICS AND COMPOSITES 287 189 193 scie scopus 000228550000032 2-s2.0-34249673429 Materials Science, Ceramics Materials Science, Composites Materials Science Article; Proceedings Paper compression molding RBSC reactive infiltration carbon black wafer carrier