Hwang, SH Shin, JC Song, JD Choi, WJ Lee, JI Han, H Lee, SW 2024-01-21T05:32:02Z 2024-01-21T05:32:02Z 2021-09-03 2005-03 0167-9317 https://pubs.kist.re.kr/handle/201004/136711 We investigated a photovoltaic three-stacked ln(0.5)Ga(0.5)As/GaAs quantum dot infrared detector (QDIP) with an Al0.3Ga0.7As single-sided blocking layer. We observed broad photocurrent spectra in the photon energy range of 120-400 meV (gimel similar to 3-10 mu m) at zero-bias voltage, due to the photovoltaic effect at low temperatures. The peak responsivity was about 10.5 mA/W at a photon energy of 200 meV (gimel similar to 6.2 mu m) at T = 40 K. The large photovoltaic effect in our detector was a result of the enhanced asymmetric band structure, caused not only by the segregation of highly doped Si atoms, but also by the single-sided Al0.3Ga0.7As layer beneath the top contact layer. (c) 2004 Elsevier B.V. All rights reserved. English ELSEVIER PHOTOCONDUCTIVITY Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer Article 10.1016/j.mee.2004.12.031 1 MICROELECTRONIC ENGINEERING, v.78-79, pp.229 - 232 MICROELECTRONIC ENGINEERING 78-79 229 232 scie scopus 000228589700039 2-s2.0-14944375380 Engineering, Electrical & Electronic Nanoscience & Nanotechnology Optics Physics, Applied Engineering Science & Technology - Other Topics Optics Physics Article; Proceedings Paper PHOTOCONDUCTIVITY quantum dot infrared photodetectors photovoltaic effect