Jun, KI Lee, JH Shin, KH Rhie, K Lee, BC 2024-01-21T05:34:11Z 2024-01-21T05:34:11Z 2021-09-03 2005-02-01 0304-8853 https://pubs.kist.re.kr/handle/201004/136749 An amorphous metallic FeZr layer is inserted inside the bottom magnetic layer in exchange-biased CoFe/Al2O3/CoFe magnetic tunnel junctions (MTJs). At room temperature, the tunneling magnetoresistance (TMR) increases from 25% to 36% before annealing, and from 45% to 52% after annealing. The junction resistance also increases with the FeZr thickness. The higher quality of the MTJ is attributed to the improved Al-oxide barrier due to the amorphousness of the FeZr layer. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV MAGNETORESISTANCE Enhancement of tunneling magneto resistance by inserting an amorphous nonmagnetic FeZr layer in magnetic tunnel junctions Article 10.1016/j.jmmm.2004.09.022 1 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.286, pp.158 - 161 JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 286 158 161 scie scopus 000226638400036 2-s2.0-11444264806 Materials Science, Multidisciplinary Physics, Condensed Matter Materials Science Physics Article; Proceedings Paper MAGNETORESISTANCE amorphous MTJ TMR FeZr