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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Shin,&#x20;SD</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;DW</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;DK</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;DY</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-21T05:34:20Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-21T05:34:20Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-01</dcvalue>
<dcvalue element="date" qualifier="issued">2005-02-01</dcvalue>
<dcvalue element="identifier" qualifier="issn">0022-0248</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;136752</dcvalue>
<dcvalue element="description" qualifier="abstract">In&#x20;this&#x20;study.&#x20;the&#x20;microstructure&#x20;and&#x20;property&#x20;of&#x20;poly-Si&#x20;film,&#x20;deposited&#x20;using&#x20;hot&#x20;wire&#x20;chemical&#x20;vapor&#x20;deposition&#x20;(HWCVD)&#x20;were&#x20;investigated.&#x20;A&#x20;consequence&#x20;of&#x20;the&#x20;low&#x20;a-Si&#x20;content&#x20;in&#x20;the&#x20;poly-Si&#x20;film&#x20;was&#x20;crystallites&#x20;with&#x20;well&#x20;developed&#x20;facets.&#x20;The&#x20;crystallite&#x20;morphology&#x20;was&#x20;rhombic&#x20;pyramidal&#x20;while&#x20;EBSD&#x20;analysis&#x20;revealed&#x20;the&#x20;existence&#x20;of&#x20;(1&#x20;1&#x20;1)&#x20;contact&#x20;twin&#x20;planes.&#x20;The&#x20;facets&#x20;of&#x20;the&#x20;rhombic&#x20;pyramidal&#x20;crystallites&#x20;were&#x20;based&#x20;oil&#x20;{3&#x20;2&#x20;0}&#x20;and&#x20;{3&#x20;2&#x20;0}*&#x20;planes,&#x20;which&#x20;have&#x20;Sigma3&#x20;twin&#x20;relationship&#x20;with&#x20;respect&#x20;to&#x20;(1&#x20;1&#x20;1)&#x20;contact&#x20;twin&#x20;plane.&#x20;(C)&#x20;2004&#x20;Published&#x20;by&#x20;Elsevier&#x20;B.V.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">ELSEVIER&#x20;SCIENCE&#x20;BV</dcvalue>
<dcvalue element="subject" qualifier="none">CHEMICAL-VAPOR-DEPOSITION</dcvalue>
<dcvalue element="subject" qualifier="none">FLATTENED&#x20;DIAMOND&#x20;CRYSTALS</dcvalue>
<dcvalue element="subject" qualifier="none">HOT-WIRE&#x20;CVD</dcvalue>
<dcvalue element="subject" qualifier="none">MICROCRYSTALLINE&#x20;SILICON</dcvalue>
<dcvalue element="subject" qualifier="none">SOLAR-CELLS</dcvalue>
<dcvalue element="subject" qualifier="none">SI</dcvalue>
<dcvalue element="subject" qualifier="none">MECHANISM</dcvalue>
<dcvalue element="title" qualifier="none">Crystal&#x20;growth&#x20;in&#x20;the&#x20;low-temperature&#x20;deposition&#x20;of&#x20;polycrystalline&#x20;silicon&#x20;thin&#x20;film</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1016&#x2F;j.jcrysgro.2004.10.151</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">JOURNAL&#x20;OF&#x20;CRYSTAL&#x20;GROWTH,&#x20;v.274,&#x20;no.3-4,&#x20;pp.347&#x20;-&#x20;354</dcvalue>
<dcvalue element="citation" qualifier="title">JOURNAL&#x20;OF&#x20;CRYSTAL&#x20;GROWTH</dcvalue>
<dcvalue element="citation" qualifier="volume">274</dcvalue>
<dcvalue element="citation" qualifier="number">3-4</dcvalue>
<dcvalue element="citation" qualifier="startPage">347</dcvalue>
<dcvalue element="citation" qualifier="endPage">354</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000226704900003</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Crystallography</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Physics,&#x20;Applied</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Crystallography</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Physics</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">CHEMICAL-VAPOR-DEPOSITION</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">FLATTENED&#x20;DIAMOND&#x20;CRYSTALS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">HOT-WIRE&#x20;CVD</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MICROCRYSTALLINE&#x20;SILICON</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SOLAR-CELLS</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">SI</dcvalue>
<dcvalue element="subject" qualifier="keywordPlus">MECHANISM</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">EBSD</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">rhombic&#x20;pyramid</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">twin</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">HWCVD</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">poly-Si</dcvalue>
</dublin_core>
