Kang, TD Lee, GS Lee, H Koh, D Park, YJ 2024-01-21T05:36:25Z 2024-01-21T05:36:25Z 2021-09-03 2005-02 0374-4884 https://pubs.kist.re.kr/handle/201004/136791 We investigate the optical properties of a series of Ga1-xMnxAs thin films by using spectroscopic ellipsometry. The Ga1-xMnxAs films are grown directly on GaAs (100) substrates by using molecular beam epitaxy. Using spectroscopic ellipsometry, we measure the pseudo-dielectric function for each of the films in the energy range between 1.0 - 6.0 eV. By using the Adachi lineshape model, we determined the dielectric functions and critical point parameters for the Ga1-xMnxAs films. We discuss the energy shifts associated with the E-1, E-1 + Delta(1), E-0(&apos;), and E-2 band gaps. We also discuss the band gap energy shift of Ga1(x)(_)Mn(x)As alloys as Mn is incorporated into the lattice. English KOREAN PHYSICAL SOC ELLIPSOMETRY GAAS Optical properties of Ga1-xMnxAs (0 <= x <= 0.09) studied using spectroscopic ellipsornetry Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, no.2, pp.482 - 486 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 46 2 482 486 scie scopus kci 000227041400023 2-s2.0-14644392180 Physics, Multidisciplinary Physics Article ELLIPSOMETRY GAAS GaMnAs ellipsometry band gap energy diluted magnetic system