Choi, WJ Song, JD Hwang, SH Lee, JI Kim, JH Song, JI Kim, EK Chovet, A 2024-01-21T05:36:51Z 2024-01-21T05:36:51Z 2021-09-03 2005-02 1386-9477 https://pubs.kist.re.kr/handle/201004/136799 Optical and electrical characteristics of n-i-n InGaAs/GaAs quantum-dot (QD) infrared photodetectors are reported. In particular, the low-frequency excess electrical noise is measured at room temperature and analyzed in conjunction with the optical properties of the structure. The three stackings of QD were formed by atomic layer molecular-beam epitaxy and highly Si-doped, and AlGaAs current-blocking layer was also included to reduce the dark current. The power-dependent photo luminescence (PL) spectra at 300 K indicates that there are at least three confined states in the QD. The photo-current was observed only at low temperatures (10 K) at wavelengths between 3 and 9 mum with three peaks. The dark current was relatively large and asymmetric at low temperatures. At room temperature the dark current was symmetric and ohmic. The 1/f-like low-frequency noise spectral density exhibited an almost quadratic current dependence giving a large value of the Hooge parameter of the order of unity. The relatively low-growth temperature for the AlGaAs current blocking layer and the high doping at the quantum dots seem to generate a considerable amount of defects and result in low-temperature photodetection and a large low-frequency noise density. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV GAAS SCHOTTKY DIODES BLOCKING LAYER TEMPERATURE PERFORMANCE DEFECTS BARRIER Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy Article 10.1016/j.physe.2004.08.010 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.26, no.1-4, pp.366 - 371 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 26 1-4 366 371 scie scopus 000227249000076 2-s2.0-13444311853 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article; Proceedings Paper GAAS SCHOTTKY DIODES BLOCKING LAYER TEMPERATURE PERFORMANCE DEFECTS BARRIER InGaAs GaAs quantum dots QDIP low-frequency noise Hooge parameter