Cho, ET Lee, HD Lee, DW Lee, JI Jung, SI Yoon, JJ Leem, JY Han, IK 2024-01-21T05:36:54Z 2024-01-21T05:36:54Z 2021-09-03 2005-02 1386-9477 https://pubs.kist.re.kr/handle/201004/136800 We have studied the optical properties of two layers of InAs self-assembled quantum dots (QDs). The QDs were separated by a GaAs barrier with thickness varied from 2.5 to 10 nm. All samples exhibited double peaks from low-temperature photoluminescence spectra. The energy difference between two peaks shows that the origin of the double peaks is different for each sample. In case of the thin barrier thickness, the double peaks are due to the coupling of the ground states of lower and upper dots. In the thick barrier case, the double peaks originate from the ground and excited states because the barrier is thick enough to separate the double QDs. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV TEMPERATURE-DEPENDENCE PHOTOLUMINESCENCE LOCALIZATION COMPUTATION Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer Article 10.1016/j.physe.2004.08.063 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.26, no.1-4, pp.276 - 280 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 26 1-4 276 280 scie scopus 000227249000058 2-s2.0-13444261041 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article; Proceedings Paper TEMPERATURE-DEPENDENCE PHOTOLUMINESCENCE LOCALIZATION COMPUTATION quantum dots coupling photoluminescence InAs bias voltage