Yoon, JJ Jung, SI Park, HJ Suh, HK Jeon, MH Leem, JY Cho, ET Lee, JI Cho, HK Mo, YG Kim, JS Son, JS Hang, IK 2024-01-21T05:37:03Z 2024-01-21T05:37:03Z 2021-09-03 2005-02 1386-9477 https://pubs.kist.re.kr/handle/201004/136803 The Optical characteristics of InAs quantum dots (QDs) embeded in InAlGaAs on InP have been investigated by photoluminescence (PL) spectroscopy and time-resolved PL. Four different QD samples are grown by using molecular beam epitaxy, and all the QD samples have five-stacked InAs quantum dot layers with a different InAlGaAs barrier thickness. The PL yield from InAs QDs was increased with an increase in the thickness of the InAlGaAs barrier, and the emission peak positions of all InAs QD samples were measured around 1.5 mum at room temperature. The decay time of the carrier in InAs QDs is decreased abruptly in the QD sample with the 5 nm InAlGaAs barrier. This feature is explained by the tunneling and coupling effect in the vertical direction and probably defect generation. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV Time-resolved photoluminescence spectroscopy of InAs quantum dots on InP with various InAlGaAs barrier thicknesses Article 10.1016/j.physe.2004.08.054 1 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.26, no.1-4, pp.207 - 211 PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 26 1-4 207 211 scie scopus 000227249000044 2-s2.0-13444257735 Nanoscience & Nanotechnology Physics, Condensed Matter Science & Technology - Other Topics Physics Article; Proceedings Paper quantum dots carrier dynamics molecular beam epitaxy InP time-resolved photoluminescence InAs