Liu, F Tong, S Kim, HJ Wang, KL 2024-01-21T05:37:36Z 2024-01-21T05:37:36Z 2021-09-01 2005-02 0925-3467 https://pubs.kist.re.kr/handle/201004/136812 A SiGe/Si Multiple Quantum Wells (MQWs) structure is proposed for highly sensitive photodetection. A large photoconductive gain is obtained because of the unique SiGe/Si band structure, i.e., a large band offset in the valence band, but a small band offset in the conduction band. Such a structure allows the trapping of photogenerated holes inside the valance band quantum wells. Alternatively, photogenerated electrons appear in shallow quantum wells and have relatively high mobility. These give rise to a large photoconductive gain. The calculated photoconductive gain for this structure exceeds 2 x 10(7). Experimental results confirmed a high gain of the structure. (c) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV DOTS Photoconductive gain of SiGe/Si quantum well photodetectors Article 10.1016/j.optmat.2004.08.025 1 OPTICAL MATERIALS, v.27, no.5, pp.864 - 867 OPTICAL MATERIALS 27 5 864 867 scie scopus 000227621300027 Materials Science, Multidisciplinary Optics Materials Science Optics Article; Proceedings Paper DOTS