Tong, S Lee, JY Kim, HJ Liu, F Wang, KL 2024-01-21T05:37:42Z 2024-01-21T05:37:42Z 2021-09-01 2005-02 0925-3467 https://pubs.kist.re.kr/handle/201004/136814 Si-based normal incident mid-infrared photodetectors using Ge dots were investigated. P-I-P structures of boron-doped Ge dots embedded in the intrinsic region were grown using solid source molecular beam epitaxy. The dark current was strongly dependent on the doping level in Ge dot. The structure grown at 700 degrees C exhibited photoresponse peaking at 3.5 mu m. FTIR measurements on identical structure showed an absorption band consistent with the photocurrent spectra. At lower temperatures, the response intensity decreased due to freeze-out of the holes. The devices also showed photovoltaic effect. The response increased with increasing bias. (c) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE BV WELL INFRARED PHOTODETECTORS ASSEMBLED QUANTUM DOTS PHOTOCURRENT SPECTROSCOPY INTERSUBBAND ABSORPTION SI PHOTOCONDUCTIVITY DETECTORS Ge dot mid-infrared photodetectors Article 10.1016/j.optmat.2004.08.065 1 OPTICAL MATERIALS, v.27, no.5, pp.1097 - 1100 OPTICAL MATERIALS 27 5 1097 1100 scie scopus 000227621300073 Materials Science, Multidisciplinary Optics Materials Science Optics Article; Proceedings Paper WELL INFRARED PHOTODETECTORS ASSEMBLED QUANTUM DOTS PHOTOCURRENT SPECTROSCOPY INTERSUBBAND ABSORPTION SI PHOTOCONDUCTIVITY DETECTORS