Chang, JY Kim, GH Lee, WY Myoung, JM 2024-01-21T05:37:49Z 2024-01-21T05:37:49Z 2021-09-03 2005-01-24 0040-6090 https://pubs.kist.re.kr/handle/201004/136816 Systematic transmission electron microscopy (TEM) study was performed to determine the change in lattice parameter of epitaxial Mn-doped GaN films with low Mn contents (0.06-0.5 at.%) grown by plasma-enhanced molecular beam epitaxy (PEMBE) by which added Mn distribution can be investigated. Secondary ion mass spectroscopy (SIMS) reveals that the Mn profiles for the films are uniform throughout the entire thickness range of 0.7-1.0 mum with no appreciable segregation. The lattice parameter for the plasma-enhanced molecular beam epitaxy grown GaMnN is found to be a=0.31865 nm, larger than those for the metal organic chemical vapor deposition grown GaN used as a substrate and plasma-enhanced molecular beam epitaxy grown GaN on metal organic chemical vapor deposition GaN, reflecting the expansion of unit lattice due to Mn ion substitution for Ga ion in the wurtzite (GaxMn1-x)N structure. Lattice parameter measurement is believed to give useful information on the crystalline quality of (GaxMn1-x)N structure grown by plasma-enhanced molecular beam epitaxy. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA DILUTED MAGNETIC SEMICONDUCTOR ROOM-TEMPERATURE LATTICE-PARAMETER GAN FILMS (GA,MN)N Manganese distribution in ferromagnetic gallium manganese nitride epitaxial film grown by plasma enhanced molecular beam epitaxy Article 10.1016/j.tsf.2004.06.144 1 THIN SOLID FILMS, v.472, no.1-2, pp.144 - 149 THIN SOLID FILMS 472 1-2 144 149 scie scopus 000225748600023 2-s2.0-10044258493 Materials Science, Multidisciplinary Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Materials Science Physics Article DILUTED MAGNETIC SEMICONDUCTOR ROOM-TEMPERATURE LATTICE-PARAMETER GAN FILMS (GA,MN)N gallium nitride (GaN) ferromagnetism (Ga,Mn)N lattice parameter convergent beam electron diffraction (CBED)