Kang, YR Kang, SC Paek, KK Kim, YK Kim, SW Ju, BK 2024-01-21T05:38:51Z 2024-01-21T05:38:51Z 2021-09-03 2005-01-03 0924-4247 https://pubs.kist.re.kr/handle/201004/136835 This paper addresses the utilization of an ultra thin silicon wafer with thickness of 50 mum to fabricate film bulk wave acoustic resonator (FBAR) generating resonant motion at 2.5 GHz which can be applied to more flexible and accumulated microsystems. As the information and communication technology starts to improve, smaller and lighter systems are needed to be flexible in a worldwide market. To accomplish this many ideas on making the heavy and rigid pieces, such as RF filter or duplexer, thin FBAR using microelectromechanical systems technology is presented in this paper. As we fabricate the FBAR using thin silicon wafer with thickness of 50 mum, it is possible to realize integrated flexible microsystems and acquire properties better than the existing devices. The resonance characteristics of thin FBAR are predicted through MATLAB simulation and then thickness of electrode and piezoelectric thin film optimized are acquired. A parallel resonance frequency is measured at 2.487 GHz. The insertion loss, Q-factor, and K-eff(2) are also 1.368 dB, 996.68, and 3.91%, respectively. (C) 2004 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA Air-gap type film bulk acoustic resonator using flexible thin substrate Article 10.1016/j.sna.2004.05.035 1 SENSORS AND ACTUATORS A-PHYSICAL, v.117, no.1, pp.62 - 70 SENSORS AND ACTUATORS A-PHYSICAL 117 1 62 70 scie scopus 000225663200007 2-s2.0-9644264128 Engineering, Electrical & Electronic Instruments & Instrumentation Engineering Instruments & Instrumentation Article ultra thin silicon wafer flexible microsystems thin FBAR resonance characteristics