김남수 이기영 최지원 주병권 정태웅 2024-01-21T05:40:02Z 2024-01-21T05:40:02Z 2021-09-06 2005-01 1226-7945 https://pubs.kist.re.kr/handle/201004/136856 The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics. 한국전기전자재료학회 수평 구조의 MOS-Controlled Thyristor에서 채널에서의 길이 및 불순물 농도에 의한 스위칭 특성 Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor Article 2 전기전자재료학회논문지, v.18, no.1, pp.17 - 23 전기전자재료학회논문지 18 1 17 23 kci ART000950708 MCT Channel length Impurity concentration Latch-up current Switching characteristics MCT Channel length Impurity concentration Latch-up current Switching characteristics