Lee, J Han, I Chang, SK Kim, E Lee, MB 2024-01-21T05:40:46Z 2024-01-21T05:40:46Z 2021-09-05 2005-01 1013-9826 https://pubs.kist.re.kr/handle/201004/136870 This paper presents a simple and novel model for low-frequency noise generation in polycrystalline-Si resistors within the number fluctuation model. The grain boundary in polycrystalline-Si thin films is the major source of noise and is modeled as independent symmetric Schottky barriers in series, face-to-face. It has been found that trapping and detrapping of the carriers at the traps in the space charge region of the grain boundary via thermal activation modulate the barrier height and generate the low-frequency noise. The model successfully explains the experimental data and gives useful information about the defects in the space charge region of the grain boundary. As a result, the Hooge parameter is interpreted in terms of defect density, among other parameters. English TRANS TECH PUBLICATIONS LTD SCHOTTKY-BARRIER DIODES 1/F NOISE POLYSILICON RESISTORS FLICKER NOISE New model for low-frequency noise in poly-Si resistors Article 10.4028/www.scientific.net/KEM.277-279.1054 1 ON THE CONVERGENCE OF BIO-INFORMATION-, ENVIRONMENTAL-, ENERGY-, SPACE- AND NANO-TECHNOLOGIES, PTS 1 AND 2, v.277-279, pp.1054 - 1059 ON THE CONVERGENCE OF BIO-INFORMATION-, ENVIRONMENTAL-, ENERGY-, SPACE- AND NANO-TECHNOLOGIES, PTS 1 AND 2 277-279 1054 1059 scie scopus 000227164500173 2-s2.0-28544452366 Engineering, Multidisciplinary Materials Science, Ceramics Materials Science, Composites Engineering Materials Science Article; Proceedings Paper SCHOTTKY-BARRIER DIODES 1/F NOISE POLYSILICON RESISTORS FLICKER NOISE low-frequency noise poly-Si resistors thermal activation tunneling random walk of electrons thermionic emission