Park, YJ Lee, JY Youm, MS Kim, YT 2024-01-21T05:41:27Z 2024-01-21T05:41:27Z 2021-09-05 2005-01 0021-4922 https://pubs.kist.re.kr/handle/201004/136883 The Ge2Sb2Te5 thin films deposited by a sputtering method on a SiO2/Si substrate were annealed. and subjected to transmission electron microscopy in order to investigate the crystallization and growth of the metastable Ge2Sb2Te5. The metastable Ge2Sb2Te5 was initially crystallized with 10-nm-sized grains and its sheet resistance was still as high as in the amorphous state. Sheet resistance was abruptly decreased at the grain growth stage after the crystallization. English JAPAN SOC APPLIED PHYSICS THIN-FILMS CRYSTAL NUCLEATION MICROSCOPY Effects of annealing conditions on the crystallization and grain growth of metastable Ge2Sb2Te5 Article 10.1143/JJAP.44.326 1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.44, no.1A, pp.326 - 327 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44 1A 326 327 scie scopus 000226996600069 2-s2.0-15544388076 Physics, Applied Physics Article THIN-FILMS CRYSTAL NUCLEATION MICROSCOPY Ge2Sb2Te5 TEM rapid thermal annealing crystallization grain growth