Han, DS Park, J Rhie, KW Kim, S Chang, J 2024-01-21T05:42:21Z 2024-01-21T05:42:21Z 2021-09-03 2005-01 0003-6951 https://pubs.kist.re.kr/handle/201004/136900 We report Mn-doped GaN nanowires exhibiting ferromagnetism even at room temperature. The growth of single-crystalline wurtzite-structured GaN nanowires doped homogeneously with about 5 at. % Mn was achieved by chemical vapor deposition using the reaction of Ga/GaN/MnCl2 with NH3. The ferromagnetic hysteresis at 5 and 300 K and the temperature-dependent magnetization curves suggest the Curie temperature around 300 K. Negative magnetoresistance of individual nanowires was observed at the temperatures below 150 K. (C) 2005 American Institute of Physics. English AMER INST PHYSICS Ferromagnetic Mn-doped GaN nanowires Article 10.1063/1.1852725 1 APPLIED PHYSICS LETTERS, v.86, no.3 APPLIED PHYSICS LETTERS 86 3 N scie scopus 000226864600048 2-s2.0-17044400944 Physics, Applied Physics Article MAGNETIC-PROPERTIES SEMICONDUCTOR FILMS INJECTION (GA,MN)N nanowire GaMnN magnetoresistance