Shon, Y Park, YS Chung, KJ Fu, DJ Kim, DY Kim, HS Kim, HJ Kang, TW Kim, Y Fan, XJ Park, YJ 2024-01-21T05:43:19Z 2024-01-21T05:43:19Z 2021-09-05 2004-12-15 0021-8979 https://pubs.kist.re.kr/handle/201004/136916 Neutron-transmutation-doped GaAs samples were prepared by irradiating the middle-level neutrons into the semi-insulating GaAs grown by a liquid encapsulated Czochralski method and subsequently implanted with Mn+. The characteristics of the Mn+-implanted neutron-transmutation-doped GaAs (namely, the implantation of Mn+ subsequent to neutron-transmutation-doping) were investigated by various measurements. The result of the energy dispersive x-ray peak displayed an injected Mn concentration of 9.65%. The photoluminescence peaks related to carbon and germanium acceptors were resolved, and the peaks related to Mn due to a neutral Mn acceptor were evidently observed. It is found that the proper activation for the neutral Mn acceptor starts from a relatively low annealing temperature of 600 degreesC for 15 min. The atomic force microscopy and magnetic forcemicroscopy images showed that magnetic clusters were well formed. The ferromagnetic hysteresis loop measured at 10 K was observed, and the temperature-dependent magnetization revealed that the two different phases exist at 135 and 360 K. The Curie temperature (T(c)similar to360 K) is caused by MnAs, which agrees with the clusters of the magnetic force microscopy image. (C) 2004 American Institute of Physics. English AMER INST PHYSICS TRANSMUTATION-DOPED GAAS NEUTRAL MANGANESE ACCEPTOR SEMI-INSULATING GAAS P-TYPE GAN ELECTRICAL-PROPERTIES SEMICONDUCTORS FERROMAGNETISM HYDROGENATION IMPURITIES EPILAYERS Optical and magnetic properties of Mn+-implanted GaAs Article 10.1063/1.1804227 1 JOURNAL OF APPLIED PHYSICS, v.96, no.12, pp.7022 - 7028 JOURNAL OF APPLIED PHYSICS 96 12 7022 7028 scie scopus 000225482400010 2-s2.0-19944421731 Physics, Applied Physics Article TRANSMUTATION-DOPED GAAS NEUTRAL MANGANESE ACCEPTOR SEMI-INSULATING GAAS P-TYPE GAN ELECTRICAL-PROPERTIES SEMICONDUCTORS FERROMAGNETISM HYDROGENATION IMPURITIES EPILAYERS diluted magnetic semiconductors GaMnAs Mn-implantation defects