Lee, JW Kim, JM Ju, BK Kim, JK Oh, MH Jang, J 2024-01-21T05:43:59Z 2024-01-21T05:43:59Z 2022-01-11 2004-12 0374-4884 https://pubs.kist.re.kr/handle/201004/136928 We have fabricated pentacene thin-film transistors (TFTs) on plastic substrates with carrier field effect mobility of 0.12 cm(2)/Vs and I-ON/I-OFF current ratio larger than 10(4) by the shadow-mask process. Pentacene TFTs were fabricated on plastic substrates by e-beam deposited oxide material, which has good adhesion and electrical properties on plastic substrates, as the gate dielectric, thermally deposited gold (Au) for the source and drain contact, and thermally evaporated pentacene for the growth of active layer. The shadow-mask process will save manufacturing cost and protect plastic substrates including active materials from organic solvent. Furthermore, all films deposited at low temperature were involved in reproducible fabrication of pentacene TFTs on plastic substrates and were suitable for an easy process for flexible display. English KOREAN PHYSICAL SOC EVAPORATED PENTACENE GATE INSULATORS TEMPERATURE STABILITY GROWTH Electrical properties of shadow-mask patterned organic thin film transistor fabricated on plastic substrate Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S612 - S614 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 S612 S614 scie scopus kci ART000963106 000226119400031 2-s2.0-12744258024 Physics, Multidisciplinary Physics Article; Proceedings Paper EVAPORATED PENTACENE GATE INSULATORS TEMPERATURE STABILITY GROWTH pentacene thin-film transistors shadow mask zirconium oxide plastic substrate