Kim, JH Jung, JH Kwack, KD Kim, TW Park, YJ 2024-01-21T05:45:19Z 2024-01-21T05:45:19Z 2022-01-10 2004-12 0374-4884 https://pubs.kist.re.kr/handle/201004/136953 The coupling effect between an InAs quantum dot and an electric-field-induced quantum dot has been investigated theoretically. When an electric field is applied between a metal probe tip and p-type semiconductor, three-dimensionally curved electric potential is formed beneath the semiconductor sub-surface region of the p-type GaAs. Accordingly, when an electric field is applied between a metal probe tip and p-type GaAs layer including InAs self-assembled quantum dots, the coupling energy states between two kinds of quantum dots, self-assembled InAs quantum dot and electric field-induced quantum dot, are formed. In this article we proved the existence of the coupling states between a single InAs quantum dot and an electric-field-induced quantum dot through the theoretical calculation on the basis of k-p theory and envelope function approximation. For this study, we solved three-dimensional Schrodinger and Poisson equations self-consistently. These results can improve the understanding of the coupling effects on the coupled quantum structures using a metal probe tip and a self-assembled quantum dot. English KOREAN PHYSICAL SOC FORCE MICROSCOPY Coupling effect between InAs quantum dot and electric field-induced quantum dot Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S585 - S588 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 S585 S588 scie scopus kci 000226119400024 2-s2.0-12744271521 Physics, Multidisciplinary Physics Article; Proceedings Paper FORCE MICROSCOPY nanostructures electronic states