Son, CS Kim, SI Kim, YH Kim, YT Choi, IH Wakahara, A Tanoue, H Ogura, M 2024-01-21T06:02:23Z 2024-01-21T06:02:23Z 2021-09-05 2004-12 0374-4884 https://pubs.kist.re.kr/handle/201004/136984 Eu ions were implanted into GaN epilayers on sapphire substrates. Sharp visible red emission lines due to inner 4f shell transitions for Eu3+ can be observed from the photoluminescence of Eu-implanted GaN. The 5D(0) -->F-7(2) transition produces the strongest red emission line. Minor lines are observed in the given spectral range. The lines at 546, 603, 624, and 667 nm are assigned to D-5(1) -->F-7(1) and D-5(0) -->F-7(1,2,3) transitions, respectively. These emission lines are little changed with varying temperature. Eu-implanted GaN can be a suitable material for application in red emission devices. English KOREAN PHYSICAL SOC BLUE ELECTROLUMINESCENCE CATHODOLUMINESCENCE PHOTOLUMINESCENCE LAYER Red emission from Eu-implanted GaN Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S519 - S521 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 S519 S521 scie scopus kci ART000963096 000226119400008 2-s2.0-12744252844 Physics, Multidisciplinary Physics Article; Proceedings Paper BLUE ELECTROLUMINESCENCE CATHODOLUMINESCENCE PHOTOLUMINESCENCE LAYER Eu GaN implantation photoluminescence