Chang, HJ Suh, KM Park, JH Gong, SC Shim, SI Kim, YT Son, CS 2024-01-21T06:02:36Z 2024-01-21T06:02:36Z 2021-09-05 2004-12 0374-4884 https://pubs.kist.re.kr/handle/201004/136988 For application in a ferroelectric random access memory, capacitors with structures of Pt/(Bi, La)Ti3O12 (BLT)/Pt and Pt/BLT/Y2O3 film layers on Si(100) substrates were prepared by the solgel method, and BLT FET devices were fabricated by using Y2O3 as buffer layer. A Pt/BLT/Pt/Si capacitor showed no critical degradation in polarization values after retention read pulses input for 10(5.5) s. The capacitance-voltage data of the Pt/BLT/Y2O3/Si capacitors at input voltage of 5 V indicate that the memory window voltage decreased from 1.4 V to 0.6 V with increasing annealing temperature from 700 C to 750 C. From the drain current as a function of gate voltage (VG) for Pt/BLT/Y2O3/Si(100)-FET devices, the memory window voltage increased from 0.3 V to 0.8 V as VG increased from 3 V to 5 V. English KOREAN PHYSICAL SOC BLT THIN-FILMS CRYSTALLINE Preparation and characterization of field effect transistor with (Bi,La)Ti3O12 ferroelectric gate material Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S886 - S889 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 S886 S889 scie scopus kci ART000961133 000226119400099 2-s2.0-12744272473 Physics, Multidisciplinary Physics Article; Proceedings Paper BLT THIN-FILMS CRYSTALLINE field effect transistor (Bi, La)Ti3O12 (BLT) Y2O3 buffer layer ferroelectric gate film