Han, IK 2024-01-21T06:02:45Z 2024-01-21T06:02:45Z 2021-09-05 2004-12 0374-4884 https://pubs.kist.re.kr/handle/201004/136991 The author's group has developed multiple quantum well (MQW)-based diffraction-limited high power laser diodes and superluminescent diodes (SLDs). For example, 1.55-mum InGaAsP tapered lasers with a maximum power of CW 2.45 W and a diffraction-limited power of CW 1 W have been reported. The author and co-authors have also developed 1.55-mum InGaAsP SLDs with an optical power of 20 mW and simultaneously 3dB bandwidth of 130 nm. The author presents recent results on the quantum dot (QD) structures and explains potential possibility of QD-based devices to prevail over the performances of MQW-based devices in terms of diffraction-limited high power laser diodes and SLDs. English KOREAN PHYSICAL SOC LINEWIDTH ENHANCEMENT FACTOR LIGHT-CURRENT CHARACTERISTICS QUANTUM-WELL LASERS SUPERLUMINESCENT DIODE DOT LASER PERFORMANCE FILAMENTATION OPERATION GAIN High power laser diodes/superluminescent diodes Article 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.45, pp.S868 - S872 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 45 S868 S872 scie scopus kci ART000963705 000226119400095 2-s2.0-12744262262 Physics, Multidisciplinary Physics Article; Proceedings Paper LINEWIDTH ENHANCEMENT FACTOR LIGHT-CURRENT CHARACTERISTICS QUANTUM-WELL LASERS SUPERLUMINESCENT DIODE DOT LASER PERFORMANCE FILAMENTATION OPERATION GAIN quantum dots laser diodes superluminescent diodes quantum well